EPC expands GaN family with 150V devices for high-power density applications

A leader in enhancement-mode gallium nitride (eGaN) power FETs and ICs, efficient power conversion (EPC) expands its selection of off-the-shelf GaN FETs in a thermally enhanced QFN package with the introduction of the 150V EPC2308 designed for motors. has expanded. Drives in power tools and robots, high-density DC-DC/ to 80V-100V for industrial applications, synchronous rectification to 28V-54V for chargers, adapters and power supplies, smartphone USB fast chargers, and solar optimizers and microinverters In.

The EPC2308 GaN FET offers a super small RDS (current) of only 4.9mΩ typical, with very small QG, QGD and QOSS parameters for low conductance and switching losses. The device features a thermally enhanced QFN package with a footprint of only 3 mm x 5 mm, providing an extremely small solution size for the highest power density applications.

The package offers wettable flank to simplify assembly and inspection and exposed top and ultra-low thermal resistances to optimize thermal dissipation through the heat sink for cooler operation.

The EPC2308 is footprint compatible with the already released 100V, 1.8mΩ EPC2302 and 100V, 3.8m EPC2306.

“The EPC2308 combines the advantages of 150 V GaN with an easy to assemble and thermally enhanced QFN package,” said Alex Lidow, EPC CEO and Co-Founder. “Our family of designer packaged GaN FETs is used to create small and light-weight battery-powered BLDC motor drives for robotics and power tools, high-efficiency 80 V input DC-DC converters, and high-efficiency USB chargers and power supplies. can do for.”

The EPC90148 development board is a half bridge featuring the EPC2308 GaN FET. It is designed for 150V maximum device voltage and 12 A maximum output current. The objective of this board is to simplify the evaluation process to accelerate the market. This 2x2in (50.8-by-50.8mm) board is designed for optimum switching performance and includes all critical components for easy evaluation.